High Color Purity Lead‐Free Perovskite Light‐Emitting Diodes via Sn Stabilization

Hongyan Liang(Tianjin University), Fanglong Yuan(University of Toronto), Andrew Johnston(University of Toronto), Congcong Gao(Tianjin University), Hitarth Choubisa(University of Toronto), Yuan Gao(University of Toronto), Ya‐Kun Wang(University of Toronto), Laxmi Kishore Sagar(University of Toronto), Bin Sun(University of Toronto), Peicheng Li(University of Toronto), Golam Bappi(University of Toronto), Bin Chen(University of Toronto), Jun Li(University of Toronto), Yunkun Wang(University of Toronto), Yitong Dong(University of Toronto), Dongxin Ma(University of Toronto), Yunan Gao(University of Toronto), Yongchang Liu(Tianjin University), Mingjian Yuan(Nankai University), Makhsud I. Saidaminov(University of Toronto), Sjoerd Hoogland(University of Toronto), Zheng‐Hong Lu(University of Toronto), Edward H. Sargent(University of Toronto)
Advanced Science
March 1, 2020
Cited by 230Open Access
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Abstract

Abstract Perovskite‐based light‐emitting diodes (PeLEDs) are now approaching the upper limits of external quantum efficiency (EQE); however, their application is currently limited by reliance on lead and by inadequate color purity. The Rec. 2020 requires Commission Internationale de l'Eclairage coordinates of (0.708, 0.292) for red emitters, but present‐day perovskite devices only achieve (0.71, 0.28). Here, lead‐free PeLEDs are reported with color coordinates of (0.706, 0.294)—the highest purity reported among red PeLEDs. The variation of the emission spectrum is also evaluated as a function of temperature and applied potential, finding that emission redshifts by <3 nm under low temperature and by <0.3 nm V −1 with operating voltage. The prominent oxidation pathway of Sn is identified and this is suppressed with the aid of H 3 PO 2 . This strategy prevents the oxidation of the constituent precursors, through both its moderate reducing properties and through its forming complexes with the perovskite that increase the energetic barrier toward Sn oxidation. The H 3 PO 2 additionally seeds crystal growth during film formation, improving film quality. PeLEDs are reported with an EQE of 0.3% and a brightness of 70 cd m −2 ; this is the record among reported red‐emitting, lead‐free PeLEDs.


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