Hybrid 1T e-DRAM and e-NVM Realized in One 10 nm node Ferro FinFET device with Charge Trapping and Domain Switching Effects
Qing Luo(University of Chinese Academy of Sciences), Ming Liu(Chinese Academy of Sciences), Jianfeng Gao(Chinese Academy of Sciences), Lu Tai(Chinese Academy of Sciences), Yan Cheng(East China Normal University), Jiahao Yin(University of Chinese Academy of Sciences), Danian Dona(Chinese Academy of Sciences), Huaxiang Yin(Chinese Academy of Sciences), Qingzhu Zhang(Hebei University of Technology), Shijie Huang(University of Chinese Academy of Sciences), Xiaoxin Xu(University of Chinese Academy of Sciences), Junfeng Li(Institute of Microelectronics), Qi Liu(University of Chinese Academy of Sciences), Xi Zhu(Chinese Academy of Sciences), Haili Ma(Chinese Academy of Sciences), Peng Yuan(Chinese Academy of Sciences), Jie Yu(Chinese Academy of Sciences), Shibing Long(University of Chinese Academy of Sciences), Haoran Yu(Chinese Academy of Sciences), Hangbing Lv(University of Chinese Academy of Sciences), Tiancheng Gong(University of Chinese Academy of Sciences)
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