Hybrid 1T e-DRAM and e-NVM Realized in One 10 nm node Ferro FinFET device with Charge Trapping and Domain Switching Effects

Qing Luo(University of Chinese Academy of Sciences), Ming Liu(China Academy of Space Technology), Jianfeng Gao(Chinese Academy of Sciences), Lu Tai(Chinese Academy of Sciences), Yan Cheng(Chinese Academy of Sciences), Jiahao Yin(University of Chinese Academy of Sciences), Danian Dona(Chinese Academy of Sciences), Huaxiang Yin(Chinese Academy of Sciences), Qingzhu Zhang(Hebei University of Technology), Shijie Huang(Shanghai University of Electric Power), Xiaoxin Xu(Shanghai University), Junfeng Li(Institute of Microelectronics), Qi Liu(State Key Laboratory of Low-Dimensional Quantum Physics), Xi Zhu(Chinese Academy of Sciences), Haili Ma(Chinese Academy of Sciences), Peng Yuan(Chinese Academy of Sciences), Jie Yu(Chinese Academy of Sciences), Shibing Long(University of Chinese Academy of Sciences), Haoran Yu(Chinese Academy of Sciences), Hangbing Lv(University of Chinese Academy of Sciences), Tiancheng Gong(University of Chinese Academy of Sciences)
Unknown
December 1, 2018
10.1109/iedm.2018.8614650
Cited by 46

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