Vertical Sandwich Gate-All-Around Field-Effect Transistors With Self-Aligned High-k Metal Gates and Small Effective-Gate-Length VariationXiaogen Yin, Tianchun Ye, Kunpeng Jia et al.|IEEE Electron Device Letters|2019Cited by 78
Hybrid 1T e-DRAM and e-NVM Realized in One 10 nm node Ferro FinFET device with Charge Trapping and Domain Switching EffectsQing Luo, Ming Liu, Yan Cheng et al.|Unknown|2018Cited by 46