A Comprehensive Review of Recent Progress on GaN High Electron Mobility Transistors: Devices, Fabrication and Reliability

Fanming Zeng(Southern University of Science and Technology), Judy X. An(Southern University of Science and Technology), Guangnan Zhou(Southern University of Science and Technology), Wenmao Li(Southern University of Science and Technology), Hui Wang(Southern University of Science and Technology), Tianli Duan(Southern University of Science and Technology), Lingli Jiang(Southern University of Science and Technology), Hongyu Yu(Southern University of Science and Technology)
Electronics
December 3, 2018
10.3390/electronics7120377
Cited by 165Open Access
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Abstract

GaN based high electron mobility transistors (HEMTs) have demonstrated extraordinary features in the applications of high power and high frequency devices. In this paper, we review recent progress in AlGaN/GaN HEMTs, including the following sections. First, challenges in device fabrication and optimizations will be discussed. Then, the latest progress in device fabrication technologies will be presented. Finally, some promising device structures from simulation studies will be discussed.

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