Carrier relaxation bottleneck in type-II InAs/InGaAlAs/InP(001) coupled quantum dots-quantum well structure emitting at 1.55 <i>μ</i>m
M. Syperek(Wrocław University of Science and Technology), G. Sęk(Wrocław University of Science and Technology), Ernest Rogowicz(Wrocław University of Science and Technology), Vitalii Sichkovskyi(University of Kassel), Sven Bauer(GFZ Helmholtz Centre for Geosciences), J. Andrzejewski(Wrocław University of Science and Technology), J. Misiewicz(University of Wrocław), Johann Peter Reithmaier(University of Kassel)
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