1.5-μm Indium Phosphide-Based Quantum Dot Lasers and Optical Amplifiers: The Impact of Atom-Like Optical Gain Material for Optoelectronics DevicesSven Bauer, Johann Peter Reithmaier, Ori Eyal et al.|IEEE Nanotechnology Magazine|2021Cited by 17
On the principle operation of tunneling injection quantum dot lasersIgor Khanonkin, G. Eisenstein, Johann Peter Reithmaier et al.|Progress in Quantum Electronics|2021Cited by 14
Control of Dynamic Properties of InAs/InAlGaAs/InP Hybrid Quantum Well‐Quantum Dot Structures Designed as Active Parts of 1.55 μm Emitting LasersW. Rudno‐Rudziński, G. Sęk, J. Andrzejewski et al.|physica status solidi (a)|2017Cited by 11
Growth and optical characteristics of InAs quantum dot structures with tunnel injection quantum wells for 1.55 <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" altimg="si1.gif" overflow="scroll"><mml:mrow><mml:mi mathvariant="normal">μ</mml:mi></mml:mrow></mml:math>m high-speed lasersSven Bauer, Johann Peter Reithmaier, Vitalii Sichkovskyi|Journal of Crystal Growth|2018Cited by 10
Carrier relaxation bottleneck in type-II InAs/InGaAlAs/InP(001) coupled quantum dots-quantum well structure emitting at 1.55 <i>μ</i>mM. Syperek, G. Sęk, J. Andrzejewski et al.|Applied Physics Letters|2018Cited by 8