Experimental characterization of the fully integrated Si-GaN cascoded FET
Jie Ren(Hong Kong University of Science and Technology), J.K.O. Sin(Hong Kong University of Science and Technology), Huaxing Jiang(South China University of Technology), Xianda Zhou(Sun Yat-sen University), Chak Wah Tang(Hong Kong University of Science and Technology), Wentao Yang(Hong Kong University of Science and Technology), Hao Feng(Hong Kong University of Science and Technology), Kei May Lau(Hong Kong University of Science and Technology)
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