A Novel 700 V Monolithically Integrated Si-GaN Cascoded Field Effect TransistorJie Ren, J.K.O. Sin, Chak Wah Tang et al.|IEEE Electron Device Letters|2018Cited by 26
A Novel Si–GaN Monolithic Integration Technology for a High-Voltage Cascoded DiodeJie Ren, J.K.O. Sin, Chao Liu et al.|IEEE Electron Device Letters|2017Cited by 18
Switching characteristics of monolithically integrated Si-GaN cascoded rectifiersJie Ren, J.K.O. Sin, Chao Liu et al.|Unknown|2017Cited by 4
Experimental characterization of the fully integrated Si-GaN cascoded FETJie Ren, J.K.O. Sin, Kei May Lau et al.|Unknown|2018Cited by 3