Studies of photoconductivity and field effect transistor behavior in examining drift mobility, surface depletion, and transient effects in Si-doped GaN nanowires in vacuum and airNorman A. Sanford, Aric W. Sanders, Benjamin Klein et al.|Journal of Applied Physics|2013Cited by 40
Studies of photoconductivity and FET behavior in examining drift mobility, surface depletion, and transient effects in Si-doped GaN nanowires examined in vacuum and air | NISTNorman A. Sanford, Aric W. Sanders, Lawrence H. Robins et al.|Journal of Applied Physics|2013Cited by 0