Modeling the effect of the two-dimensional hole gas in a GaN/AlGaN/GaN heterostructure
Joydeep Ghosh(National University of Singapore), Swaroop Ganguly(Indian Institute of Technology Bombay), Apurba Laha(Indian Institute of Technology Bombay), Dipankar Saha(Indian Institute of Technology Bombay)
Cited by 8
Related Papers
Transfer Learning-Based Artificial Intelligence-Integrated Physical Modeling to Enable Failure Analysis for 3 Nanometer and Smaller Silicon-Based CMOS Transistors
|ACS Applied Nano Materials|2021|46
Physical Insights into Vacancy-Based Memtransistors: Toward Power Efficiency, Reliable Operation, and Scalability
|ACS Nano|2022|30
A study of electrical characteristics of Gd2O3/GaN and Gd2O3/AlGaN/GaN MOS Heterostructures
|Microelectronic Engineering|2019|15
Significance of activation functions in developing an online classifier for semiconductor defect detection
|Knowledge-Based Systems|2022|14
Modeling and simulation of AlGaN/InGaN/GaN double heterostructures using distributed surface donor states
|Japanese Journal of Applied Physics|2018|13