A study of electrical characteristics of Gd2O3/GaN and Gd2O3/AlGaN/GaN MOS HeterostructuresJoydeep Ghosh, Apurba Laha, Swaroop Ganguly et al.|Microelectronic Engineering|2019Cited by 15
Modeling and simulation of AlGaN/InGaN/GaN double heterostructures using distributed surface donor statesJoydeep Ghosh, Swaroop Ganguly|Japanese Journal of Applied Physics|2018Cited by 13
Temperature Dependent Variability Analysis of Threshold Voltage and On-Current for Optimum Switching Performance by Gallium Nitride-based Junctionless FinFETSupriya Mukherjee, Swaroop Ganguly, Dipankar Saha et al.|2019 Electron Devices Technology and Manufacturing Conference (EDTM)|2019Cited by 11
Modeling the effect of the two-dimensional hole gas in a GaN/AlGaN/GaN heterostructureJoydeep Ghosh, Swaroop Ganguly, Apurba Laha et al.|Unknown|2017Cited by 8
Charge density and bare surface barrier height in GaN/AlGaN/GaN heterostructures: A modeling and simulation studyJoydeep Ghosh, Apurba Laha, Swaroop Ganguly et al.|International Journal of RF and Microwave Computer-Aided Engineering|2018Cited by 7