High Breakdown Voltage (−201) $\beta $ -Ga2O3 Schottky Rectifiers

Jiancheng Yang(United States Naval Research Laboratory), Akito Kuramata(Crystal Research (United States)), Soohwan Jang(Dankook University), S. J. Pearton(University of Florida), F. Ren(University of Florida), Shihyun Ahn(University of Florida)
IEEE Electron Device Letters
May 16, 2017
Cited by 229


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