Nickel Stanogermanide Ohmic Contact on N-type Germanium-Tin (Ge1-xSnx) using Se and S Implant and Segregation
Yi Tong(Chinese Academy of Sciences), Yee‐Chia Yeo(Agency for Science, Technology and Research), S. S. Su, Yi Yang(Jilin University), Kain Lu Low(University of Liverpool), Chunlai Xue(Chinese Academy of Sciences), Genquan Han(Xuzhou University of Technology), Likun Wang(National University of Singapore), Phyllis Shi Ya Lim(National University of Singapore), B. Liu(National University of Singapore), Wilson Wang(National University of Singapore), Bo-Yuan Cheng, G. Zhang
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