Extremely Large Gate Modulation in Vertical Graphene/WSe<sub>2</sub> Heterojunction Barristor Based on a Novel Transport MechanismJaewoo Shim, Jin‐Hong Park, Jaeho Jeon et al.|Advanced Materials|2016Cited by 105
Extremely Low Contact Resistance on Graphene through n‐Type Doping and Edge Contact DesignHyung‐Youl Park, Jin‐Hong Park, Woo‐Shik Jung et al.|Advanced Materials|2015Cited by 86
Wide-Range Controllable n-Doping of Molybdenum Disulfide (MoS<sub>2</sub>) through Thermal and Optical ActivationHyung‐Youl Park, Jin‐Hong Park, Myung-Hoon Lim et al.|ACS Nano|2015Cited by 63