89-GHz f/sub T/ room-temperature silicon MOSFETs
Ran Yan(King's College London), A. Ourmazd(University of Wisconsin–Milwaukee), Jeffrey Bokor(Berkeley College), E.H. Westerwick(AT&T (United States)), Y.O. Kim(AT&T (United States)), K.F. Lee(AT&T (United States)), C.S. Rafferty(AT&T (United States)), M.R. Pinto(AT&T (United States)), D. M. Tennant(University of Tennessee at Knoxville), A.M. Voshchenkov(AT&T (United States)), Dae‐Young Jeon(AT&T (United States)), P. P. Mulgrew(AT&T (United States)), M.D. Morris(Brooke Army Medical Center), K. Early(AT&T (United States)), R.G. Swartz(AT&T (United States)), R. K. Watts(AT&T (United States)), W Mansfield(AT&T (United States)), G.M. Chin(AT&T (United States)), B.G. Park(AT&T (United States))
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