Non-volatile spin-transfer torque RAM (STT-RAM): Data, analysis and design requirements for thermal stability
A. Driskill-Smith(Samsung (United States)), E. Chen, Roland Kawakami(The Ohio State University), D. P. Druist, V. Nikitin(Samsung (United States)), X. Tang(West China Medical Center of Sichuan University), A. Ong(Samsung (United States)), Steven Watts(Florida State University), X. Luo, Dmytro Apalkov(Samsung (United States))
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