Basic principles of STT-MRAM cell operation in memory arraysA. V. Khvalkovskiy, M. Krounbi, Dmytro Apalkov et al.|Journal of Physics D Applied Physics|2013Cited by 542
Matching domain-wall configuration and spin-orbit torques for efficient domain-wall motionA. V. Khvalkovskiy, A. Fert, Vincent Cros et al.|Physical Review B|2013Cited by 417
Advances and Future Prospects of Spin-Transfer Torque Random Access MemoryE. Chen, P. B. Visscher, Dmytro Apalkov et al.|IEEE Transactions on Magnetics|2010Cited by 388
Erratum: Basic principles of STT-MRAM cell operation in memory arraysA. V. Khvalkovskiy, M. Krounbi, Dmytro Apalkov et al.|Journal of Physics D Applied Physics|2013Cited by 97
Fully integrated 54nm STT-RAM with the smallest bit cell dimension for high density memory applicationSuock Chung, Sung-Joo Hong, K.-M. Rho et al.|Unknown|2010Cited by 89