Basic principles of STT-MRAM cell operation in memory arrays

A. V. Khvalkovskiy(Samsung (United States)), M. Krounbi(Samsung (United States)), Dmytro Apalkov(Samsung (United States)), D. K. Lottis(Samsung (United States)), E Chen(Samsung (United States)), W. H. Butler(Shell (United States)), P. B. Visscher(University of Alabama), V. Nikitin(Samsung (United States)), R. S. Beach(Samsung (United States)), X. Tang(Tibet University), A. Driskill-Smith(Samsung (United States)), Steven Watts(Florida State University), A. Ong(Samsung (United States)), Roman V. Chepulskii(Samsung (United States))
Journal of Physics D Applied Physics
February 1, 2013
Cited by 542


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