Fully integrated 54nm STT-RAM with the smallest bit cell dimension for high density memory application
Suock Chung(SK Group (United States)), Sung-Joo Hong(SK Group (United States)), Sarim Kim(SK Group (United States)), H.-J. Kim(SK Group (United States)), Junrye Rho(SK Group (United States)), Junbeom Park(SK Group (United States)), Jeongbin Kim(SK Group (United States)), YoungBin Seo(SK Group (United States)), Dong-hyun Kim(SK Group (United States)), Dooyoung Jung(SK Group (United States)), M.-S. Lee(SK Group (United States)), V. Nikitin(Samsung (United States)), Yong-Ki Kim(SK Group (United States)), S. M. Hwang(SK Group (United States)), Geonhyeong Park(SK Group (United States)), Yerim An(SK Group (United States)), S.-H. Cho(SK Group (United States)), S.-H. Lee(SK Group (United States)), Hongju Suh(SK Group (United States)), Gyuan Jin(SK Group (United States)), K.-M. Rho(SK Group (United States)), X. Tang(West China Medical Center of Sichuan University), A. Driskill-Smith(Samsung (United States)), Jae Goan Jeong(SK Group (United States)), A. Ong(Samsung (United States)), Sihyeon Park(SK Group (United States)), Jeongho Yi(SK Group (South Korea)), Jongwon Lee(SK Group (United States)), Hyebeen Hwang(SK Group (United States)), Sun Woo Chung(SK Group (United States))
Cited by 89
Related Papers
Basic principles of STT-MRAM cell operation in memory arrays
|Journal of Physics D Applied Physics|2013|542
Matching domain-wall configuration and spin-orbit torques for efficient domain-wall motion
|Physical Review B|2013|417
Advances and Future Prospects of Spin-Transfer Torque Random Access Memory
|IEEE Transactions on Magnetics|2010|388
Current insights and future perspectives of ultraviolet radiation (UV) exposure: Friends and foes to the skin and beyond the skin
|Environment International|2024|320
Perpendicular Spin Torques in Magnetic Tunnel Junctions
|Physical Review Letters|2008|121