HfO[sub 2] Atomic Layer Deposition Using HfCl[sub 4]∕H[sub 2]O: The First Reaction Cycle
Laura Nyns(IMEC), Stefan De Gendt(Imec the Netherlands), Matty Caymax(IMEC), Sven Van Elshocht(Columbia University), Chris Vinckier(KU Leuven), Marc Heyns(IMEC), Annelies Delabie(IMEC)
Cited by 27
Related Papers
Electrical properties of high-κ gate dielectrics: Challenges, current issues, and possible solutions
|Materials Science and Engineering R Reports|2006|278
Effective electrical passivation of Ge(100) for high-k gate dielectric layers using germanium oxide
|Applied Physics Letters|2007|271
Germanium MOSFET Devices: Advances in Materials Understanding, Process Development, and Electrical Performance
|Journal of The Electrochemical Society|2008|267
High-k dielectrics for future generation memory devices (Invited Paper)
|Microelectronic Engineering|2009|252
Synthesis, Self-Assembly, and Nonlinear Optical Properties of Conjugated Helical Metal Phthalocyanine Derivatives
|Journal of the American Chemical Society|1999|200