Fabrication and thermal-chemical stability of magnetoresistive random-access memory cells using α-Fe/sub 2/O/sub 3/ bottom spin valves
Seongtae Bae(University of Minnesota), J.H. Judy(University of Minnesota), P.J. Chen(National Institute of Standards and Technology), S. Zürn, W. F. Egelhoff, E. J. Torok, L. Sheppard
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