Fabrication and thermal-chemical stability of magnetoresistive random-access memory cells using α-Fe/sub 2/O/sub 3/ bottom spin valves

Seongtae Bae(University of Minnesota), J.H. Judy(University of Minnesota), P.J. Chen(National Institute of Standards and Technology), S. Zürn, W. F. Egelhoff, E. J. Torok, L. Sheppard
IEEE Transactions on Magnetics
January 1, 2001
Cited by 9


Related Papers