Magnetoelectronic characteristics of a GMR transpinnor and a magnetic random access memory using a closed-flux NiFe/Cu/CoFe/Cu/NiFe pseudo spin-valveSeongtae Bae, E. J. Torok, J.H. Judy et al.|Journal of Applied Physics|2002Cited by 10
Fabrication and thermal-chemical stability of magnetoresistive random-access memory cells using α-Fe/sub 2/O/sub 3/ bottom spin valvesSeongtae Bae, J.H. Judy, S. Zürn et al.|IEEE Transactions on Magnetics|2001Cited by 9
Magnetoelectronic devices using α-Fe/sub 2/O/sub 3/ bottom GMR spin-valvesSeongtae Bae, J.H. Judy, W. F. Egelhoff et al.|IEEE Transactions on Magnetics|2001Cited by 3
"Transpinnor": A new giant magnetoresistive spin-valve deviceE. J. Torok, P.J. Chen, S. Zürn et al.|Unknown|2003Cited by 2
Effects of pumping time and oxidation of multilayers on the GMR ratio of RF sputtered metallic MRAM dual spin valvesSeongtae Bae, J.H. Judy, Nobuhiro Matsushita et al.|INTERMAG 2000 Digest of Technical Papers. 2000 IEEE International Magnetics Conference|2005Cited by 0