Low temperature Si homo-epitaxy by reduced pressure chemical vapor deposition using dichlorosilane, silane and trisilane
Benjamin Vincent(IMEC), Matty Caymax(IMEC), Roger Loo(IMEC), Guy Brammertz(IMEC), W. Vandervorst(IMEC)
Cited by 40
Related Papers
Effective electrical passivation of Ge(100) for high-k gate dielectric layers using germanium oxide
|Applied Physics Letters|2007|271
Germanium MOSFET Devices: Advances in Materials Understanding, Process Development, and Electrical Performance
|Journal of The Electrochemical Society|2008|267
Undoped and <i>in-situ</i> B doped GeSn epitaxial growth on Ge by atmospheric pressure-chemical vapor deposition
|Applied Physics Letters|2011|189
Island growth in the atomic layer deposition of zirconium oxide and aluminum oxide on hydrogen-terminated silicon: Growth mode modeling and transmission electron microscopy
|Journal of Applied Physics|2004|156
Germanium surface passivation and atomic layer deposition of high-<i>k</i>dielectrics—a tutorial review on Ge-based MOS capacitors
|Semiconductor Science and Technology|2012|155