Hydrogen incorporation and diffusivity in plasma-exposed bulk ZnO
K. Ip(University of Florida), J. M. Zavada(Triangle), D. C. Look(Wright State University), B. Luo(University of Florida), S. J. Pearton(United States Naval Research Laboratory), Young-Woo Heo(University of Florida), F. Ren(Chongqing University), M. E. Overberg(University of Florida), C. E. Stutz(United States Air Force Research Laboratory), D. P. Norton(University of Florida)
Cited by 211
Related Papers
A review of Ga2O3 materials, processing, and devices
|Applied Physics Reviews|2018|3k
GaN: Processing, defects, and devices
|Journal of Applied Physics|1999|1.8k
Wide band gap ferromagnetic semiconductors and oxides
|Journal of Applied Physics|2002|1k
Perspective: Ga2O3 for ultra-high power rectifiers and MOSFETS
|Journal of Applied Physics|2018|633
ZnO nanowire growth and devices
|Materials Science and Engineering R Reports|2004|574