Non-volatile Spin-Transfer Torque RAM (STT-RAM): An analysis of chip data, thermal stability and scalability
A. Driskill-Smith(Samsung (United States)), E. Chen(Applied StemCell (United States)), Dmytro Apalkov(Samsung (United States)), D. P. Druist, V. Nikitin(Samsung (United States)), Zhuo Diao, X. Tang(Tibet University), A. Ong(Samsung (United States)), X. Luo, Steven Watts(Florida State University)
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