Identification by photoluminescence and positron annihilation of vacancy and interstitial intrinsic defects in ion-implanted silicon
Ruth E. Harding(King's College London), J. Wong‐Leung(Australian National University), C. P. Burrows(University of Bath), J. Tan(King's College London), P. G. Coleman(Committee on Climate Change), Glyn Rees Davies(King's College London)
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