Photoluminescence response of ion-implanted siliconRuth E. Harding, J. Wong‐Leung, C. P. Burrows et al.|Applied Physics Letters|2006Cited by 15
Study of defects in ion-implanted silicon using photoluminescence and positron annihilationRuth E. Harding, J. Wong‐Leung, G. Davies et al.|Physica B Condensed Matter|2003Cited by 8
The formation, migration, agglomeration and annealing of vacancy-type defects in self-implanted SiP. G. Coleman, J. Wong‐Leung, Ruth E. Harding et al.|Journal of Materials Science Materials in Electronics|2006Cited by 8
Identification by photoluminescence and positron annihilation of vacancy and interstitial intrinsic defects in ion-implanted siliconRuth E. Harding, J. Wong‐Leung, Glyn Rees Davies et al.|Journal of Applied Physics|2006Cited by 7
Ion implantation effects in silicon with high carbon content characterised by photoluminescenceJin Tan, J. Wong‐Leung, Shusaku Hayama et al.|Physica B Condensed Matter|2003Cited by 5