Ion beam assisted crystallization of amorphous silicon layers using high current density Gallium beams
Jonathan England, R. Gwilliam(University of Surrey), Alexandre Laquerre(Fibics (Canada)), Andrew J. Smith(Intel (United States)), Michael W. Phaneuf(Fibics (Canada))
Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms
February 2, 2011
Cited by 6
Related Papers
Processing two-dimensional X-ray diffraction and small-angle scattering data in <i>DAWN 2</i>
|Journal of Applied Crystallography|2017|534
Metal-organic framework glasses with permanent accessible porosity
|Nature Communications|2018|225
Nanowire spin torque oscillator driven by spin orbit torques
|Nature Communications|2014|221