The effect of channel hot electron stress on a.c. device characteristics of MOSFETs
A. Kalnitsky(Texas Instruments (United States)), Shikha Sharma(University of Rome Tor Vergata)
Cited by 4
Related Papers
Emerging challenges in antimicrobial resistance: implications for pathogenic microorganisms, novel antibiotics, and their impact on sustainability
|Frontiers in Microbiology|2024|161
Transistor characteristics with Ta/sub 2/O/sub 5/ gate dielectric
|IEEE Electron Device Letters|1998|102
Leakage current comparison between ultra-thin Ta<sub>2</sub>O<sub>5</sub> films and conventional gate dielectrics
|IEEE Electron Device Letters|1998|72
Augmenting abiotic stress tolerance and root architecture: The function of phytohormone-producing PGPR and their interaction with nanoparticles
|South African Journal of Botany|2024|63