Vertical-current-induced domain-wall motion in MgO-based magnetic tunnel junctions with low current densities
André Chanthbouala(Université Paris-Sud), Shinji Yuasa(National Institute of Advanced Industrial Science and Technology), Vincent Cros(Thales (Portugal)), H. Maehara(Canon Anelva (Japan)), A. Anane(Thales (Portugal)), Yoshinori Nagamine(Canon Anelva (Japan)), Akio Fukushima(National Institute of Advanced Industrial Science and Technology), A. Fert(Centre National de la Recherche Scientifique), Rie Matsumoto(National Institute of Advanced Industrial Science and Technology), К. А. Звездин(Russian Academy of Sciences), K. Tsunekawa(Canon Anelva (Japan)), A. V. Khvalkovskiy(Samsung (United States)), K Nishimura(Canon Anelva (Japan)), Julie Grollier(Université Paris-Sud)
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