Vertical-current-induced domain-wall motion in MgO-based magnetic tunnel junctions with low current densities
André Chanthbouala(Université Paris-Sud), Shinji Yuasa(National Institute of Advanced Industrial Science and Technology), Vincent Cros(Université Paris-Sud), H. Maehara(Canon Anelva (Japan)), A. Anane(Université Paris-Sud), Yoshinori Nagamine(Canon Anelva (Japan)), Akio Fukushima(National Institute of Advanced Industrial Science and Technology), A. Fert(Université Paris-Sud), Rie Matsumoto(National Institute of Advanced Industrial Science and Technology), К. А. Звездин(Russian Academy of Sciences), K. Tsunekawa(Canon Anelva (Japan)), A. V. Khvalkovskiy(Samsung (United States)), K Nishimura(Canon Anelva (Japan)), Julie Grollier(Université Paris-Sud)
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