A ferroelectric memristorAndré Chanthbouala, Julie Grollier, Stéphane Xavier et al.|Nature Materials|2012Cited by 1.2k
Solid-state memories based on ferroelectric tunnel junctionsAndré Chanthbouala, A. Barthélémy, Arnaud Crassous et al.|Nature Nanotechnology|2011Cited by 611
Vertical-current-induced domain-wall motion in MgO-based magnetic tunnel junctions with low current densitiesAndré Chanthbouala, Shinji Yuasa, Rie Matsumoto et al.|Nature Physics|2011Cited by 186