Variation-tolerant Cu<sub>x</sub>Si<sub>y</sub>O-based RRAM for low power application

Wenxiang Jian(Fudan University), Jingang Wu(Semiconductor Manufacturing International (China)), Qingtian Zou(The University of Texas Southwestern Medical Center), Gang Jin(China Aerodynamics Research and Development Center), Na Yan(Fudan University), Yinyin Lin(Fudan University), Zhongyu Bi(Fudan University), Ryan Huang(Semiconductor Manufacturing International (China)), Hao Min(Fudan University)
IEICE Electronics Express
January 1, 2012
Cited by 1


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