A 0.13 µm 8 Mb Logic-Based Cu$_{\rm x}$Si$_{\rm y}$O ReRAM With Self-Adaptive Operation for Yield Enhancement and Power Reduction
Xiaoyong Xue(Beijing University of Chinese Medicine), Jingang Wu(Semiconductor Manufacturing International (China)), Qingtian Zou(The University of Texas Southwestern Medical Center), Gang Chen(Fudan University), Yinyin Lin(Fudan University), Jianguo Yang(Fudan University), Fanjie Xiao(Fudan University), Yufeng Xie(Shanghai Fudan Microelectronics (China)), Wenxiang Jian(Fudan University), Ryan Huang(Semiconductor Manufacturing International (China)), Shuliu Xu(Fudan University)
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