Fabrication and performance of GaN electronic devices

S. J. Pearton(United States Naval Research Laboratory), K.P. Lee(University of Florida), A.P. Zhang(University of Florida), F. Ren(Chongqing University)
Materials Science and Engineering R Reports
December 1, 2000
10.1016/s0927-796x(00)00028-0
Cited by 498

Related Papers

A review of Ga2O3 materials, processing, and devices
|Applied Physics Reviews|2018|3k
GaN: Processing, defects, and devices
|Journal of Applied Physics|1999|1.8k
Wide band gap ferromagnetic semiconductors and oxides
|Journal of Applied Physics|2002|1k
Perspective: Ga2O3 for ultra-high power rectifiers and MOSFETS
|Journal of Applied Physics|2018|633
ZnO nanowire growth and devices
|Materials Science and Engineering R Reports|2004|574