Effect of hafnium germanate formation on the interface of HfO2/germanium metal oxide semiconductor devices
Sven Van Elshocht(Columbia University), Marc Meuris(IMEC), I. Hoflijk(IMEC), Thierry Conard(IMEC), Matty Caymax(IMEC), Jan Van Steenbergen(IMEC), Marc Heyns(IMEC), Stefan De Gendt(Imec the Netherlands), Brice De Jaeger(IMEC), Michel Houssa(IMEC)
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