Hf-based high-k dielectrics for p-Ge MOS gate stacks
Sivan Fadida(Technion – Israel Institute of Technology), M. Eizenberg(Technion – Israel Institute of Technology), Sven Van Elshocht(Columbia University), Félix Palumbo(Technion – Israel Institute of Technology), Dennis Lin(IMEC), Matty Caymax(IMEC), Laura Nyns(IMEC)
Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena
December 3, 2013
Cited by 18
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