Switching transition between bi-stable memory switching and mono-stable threshold switching based on ion migration in a NiO thin film
Inrok Hwang(Konkuk University), Bae Ho Park(Konkuk University), Gyoung-Ho Buh(Korean Intellectual Property Office), Sahwan Hong(Konkuk University), Jin Sik Choi(Konkuk University), Sung-Oong Kang, Ik-Su Byun(Konkuk University), Seung-Woong Lee(Government of the Republic of Korea), Jin‐Soo Kim(Seoul National University), Yeon Soo Kim(Seoul National University), Myoung‐Jae Lee(Samsung (South Korea)), Sangho Jeon, Seung‐Eon Ahn(Korea University of Technology and Education), Bo Soo Kang(Samsung (South Korea))
Bulletin of the American Physical Society
March 17, 2010
Cited by 0
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