Focused Ion Beam Induced Effects on MOS Transistor Parameters
A. N. Campbell(Sandia National Laboratories California), Marsha Abramo, Charles E. Hembree(Sandia National Laboratories California), Scot E. Swanson(Sandia National Laboratories California), William E. Vanderlinde(Cornell University), Nicholas Antoniou, Paiboon Tangyunyong(Sandia National Laboratories California), J.M. Soden(Sandia National Laboratories California), Jeffrey Richard Jessing(Sandia National Laboratories California), Daniel M. Fleetwood(Vanderbilt University)
Proceedings - International Symposium for Testing and Failure Analysis
October 1, 1999
Cited by 6
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