Electric field and temperature scaling of polarization reversal in silicon doped hafnium oxide ferroelectric thin films
Dayu Zhou(University of Electronic Science and Technology of China), Uwe Schroeder(NaMLab (Germany)), Melvin M. Vopson(University of Portsmouth), Tony Schenk(NaMLab (Germany)), Fei Cao(Amherst College), Jin Xu, Yan Guan(Dalian University of Technology), Hailong Liang(People's Liberation Army No. 150 Hospital), Xianlin Dong(Chinese Academy of Sciences), Johannes Mueller(Fraunhofer Institute for Photonic Microsystems)
Cited by 129
Related Papers
Novel BaTiO <sub>3</sub> -based lead-free ceramic capacitors featuring high energy storage density, high power density, and excellent stability
|Journal of Materials Chemistry C|2018|535
Antiferroelectrics for Energy Storage Applications: a Review
|Advanced Materials Technologies|2018|513
Ferroelectric hafnium oxide: A CMOS-compatible and highly scalable approach to future ferroelectric memories
|Unknown|2013|499
Wake-up effects in Si-doped hafnium oxide ferroelectric thin films
|Applied Physics Letters|2013|401
Novel Sodium Niobate-Based Lead-Free Ceramics as New Environment-Friendly Energy Storage Materials with High Energy Density, High Power Density, and Excellent Stability
|ACS Sustainable Chemistry & Engineering|2018|325