Ferroelectric hafnium oxide: A CMOS-compatible and highly scalable approach to future ferroelectric memories
Johannes Müller(Fraunhofer Institute for Photonic Microsystems), Thomas Mikolajick(NaMLab (Germany)), Ralf van Bentum(GlobalFoundries (Germany)), Alfred Kersch, Stefan Müller(Fraunhofer Institute for Applied Solid State Physics), Sergei V. Kalinin(University of Tennessee at Knoxville), Wenke Weinreich(Fraunhofer Institute for Photonic Microsystems), Ekaterina Yurchuk(NaMLab (Germany)), Thomas M. Arruda(Oak Ridge National Laboratory), Tony Schenk(NaMLab (Germany)), Konrad Seidel(Fraunhofer Institute for Photonic Microsystems), T. S. Böscke, K. Khullar(NaMLab (Germany)), Amit Kumar(Queen's University Belfast), Dominik Martin(NaMLab (Germany)), U. Schröder(NaMLab (Germany)), Roman Boschke(GlobalFoundries (Germany)), T. Schlösser(GlobalFoundries (Germany)), S. Riedel(Fraunhofer Institute for Photonic Microsystems), P. Polakowski(Fraunhofer Institute for Photonic Microsystems)
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