Wake-up effects in Si-doped hafnium oxide ferroelectric thin films

Dayu Zhou(University of Electronic Science and Technology of China), U. Schröder(NaMLab (Germany)), Tony Schenk(NaMLab (Germany)), Fei Cao(Amherst College), Jin Xu, Qing Li(Huazhong University of Science and Technology), Yan Guan(Dalian University of Technology), Xianlin Dong(Chinese Academy of Sciences), Johannes Müller(Fraunhofer Institute for Photonic Microsystems)
Applied Physics Letters
November 4, 2013
10.1063/1.4829064
Cited by 401

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