Jianhua Shi

Cyber-Physical Systems (CPSs) are characterized by integrating computation and physical processes. The theories and applications of CPSs face the enormous challenges. The aim of this work is to provide a better understanding of this emerging multi-disciplinary methodology. First, the features of CPSs are described, and the research progresses are summarized from different perspectives such as energy control, secure control, transmission and management, control technique, system resource allocation, and model-based software design. Then three classic applications are given to show that the prospects of CPSs are engaging. Finally, the research challenges and some suggestions for future work are in brief outlined.

Abstract Perovskite/silicon tandem solar cells are promising avenues for achieving high‐performance photovoltaics with low costs. However, the highest certified efficiency of perovskite/silicon tandem devices based on economically matured silicon heterojunction technology (SHJ) with fully textured wafer is only 25.2% due to incompatibility between the limitation of fabrication technology which is not compatible with the production‐line silicon wafer. Here, a molecular‐level nanotechnology is developed by designing NiO x /2PACz ([2‐(9H‐carbazol‐9‐yl) ethyl]phosphonic acid) as an ultrathin hybrid hole transport layer (HTL) above indium tin oxide (ITO) recombination junction, to serve as a vital pivot for achieving a conformal deposition of high‐quality perovskite layer on top. The NiO x interlayer facilitates a uniform self‐assembly of 2PACz molecules onto the fully textured surface, thus avoiding direct contact between ITO and perovskite top‐cell for a minimal shunt loss. As a result of such interfacial engineering, the fully textured perovskite/silicon tandem cells obtain a certified efficiency of 28.84% on a 1.2‐cm 2 masked area, which is the highest performance to date based on the fully textured, production‐line compatible SHJ. This work advances commercially promising photovoltaics with high performance and low costs by adopting a meticulously designed HTL/perovskite interface.

Abstract Flexible solar cells have a lot of market potential for application in photovoltaics integrated into buildings and wearable electronics because they are lightweight, shockproof and self-powered. Silicon solar cells have been successfully used in large power plants. However, despite the efforts made for more than 50 years, there has been no notable progress in the development of flexible silicon solar cells because of their rigidity 1–4 . Here we provide a strategy for fabricating large-scale, foldable silicon wafers and manufacturing flexible solar cells. A textured crystalline silicon wafer always starts to crack at the sharp channels between surface pyramids in the marginal region of the wafer. This fact enabled us to improve the flexibility of silicon wafers by blunting the pyramidal structure in the marginal regions. This edge-blunting technique enables commercial production of large-scale (>240 cm 2 ), high-efficiency (>24%) silicon solar cells that can be rolled similarly to a sheet of paper. The cells retain 100% of their power conversion efficiency after 1,000 side-to-side bending cycles. After being assembled into large (>10,000 cm 2 ) flexible modules, these cells retain 99.62% of their power after thermal cycling between −70 °C and 85 °C for 120 h. Furthermore, they retain 96.03% of their power after 20 min of exposure to air flow when attached to a soft gasbag, which models wind blowing during a violent storm.

Abstract Recent achievements in amorphous/crystalline silicon heterojunction (SHJ) solar cells and perovskite/SHJ tandem solar cells place hydrogenated amorphous silicon (a-Si:H) at the forefront of photovoltaics. Due to the extremely low effective doping efficiency of trivalent boron in amorphous tetravalent silicon, light harvesting of aforementioned devices is limited by their fill factors (FFs), a direct metric of the charge carrier transport. It is challenging but crucial to develop highly conductive doped a-Si:H with minimal FF losses. Here we report that light soaking can efficiently boost the dark conductance of boron-doped a-Si:H thin films. Light induces diffusion and hopping of weakly bound hydrogen atoms, which activates boron doping. The effect is reversible and the dark conductivity decreases over time when the solar cell is no longer illuminated. By implementing this effect to SHJ solar cells, we achieved a certified total-area power conversion efficiency of 25.18% with a FF of 85.42% on a 244.63 cm 2 wafer.