Fully Textured, Production‐Line Compatible Monolithic Perovskite/Silicon Tandem Solar Cells Approaching 29% Efficiency

Lin Mao(University of Electronic Science and Technology of China), Tian Yang(China Academy of Engineering Physics), Hao Zhang(University of Electronic Science and Technology of China), Jianhua Shi(Shanghai Institute of Microsystem and Information Technology), Yuchao Hu(University of Electronic Science and Technology of China), Peng Zeng(University of Electronic Science and Technology of China), Faming Li(University of Electronic Science and Technology of China), Jue Gong(University of Electronic Science and Technology of China), Xiaoyu Fang(University of Electronic Science and Technology of China), Yinqing Sun(University of Electronic Science and Technology of China), Xiaochun Liu(University of Electronic Science and Technology of China), Junlin Du(Shanghai Institute of Microsystem and Information Technology), Anjun Han(Shanghai Institute of Microsystem and Information Technology), Liping Zhang(Shanghai Institute of Microsystem and Information Technology), Wenzhu Liu(Shanghai Institute of Microsystem and Information Technology), Fanying Meng(Shanghai Institute of Microsystem and Information Technology), Xudong Cui(China Academy of Engineering Physics), Zhengxin Liu(Shanghai Institute of Microsystem and Information Technology), Mingzhen Liu(University of Electronic Science and Technology of China)
Advanced Materials
August 19, 2022
Cited by 298

Abstract

Abstract Perovskite/silicon tandem solar cells are promising avenues for achieving high‐performance photovoltaics with low costs. However, the highest certified efficiency of perovskite/silicon tandem devices based on economically matured silicon heterojunction technology (SHJ) with fully textured wafer is only 25.2% due to incompatibility between the limitation of fabrication technology which is not compatible with the production‐line silicon wafer. Here, a molecular‐level nanotechnology is developed by designing NiO x /2PACz ([2‐(9H‐carbazol‐9‐yl) ethyl]phosphonic acid) as an ultrathin hybrid hole transport layer (HTL) above indium tin oxide (ITO) recombination junction, to serve as a vital pivot for achieving a conformal deposition of high‐quality perovskite layer on top. The NiO x interlayer facilitates a uniform self‐assembly of 2PACz molecules onto the fully textured surface, thus avoiding direct contact between ITO and perovskite top‐cell for a minimal shunt loss. As a result of such interfacial engineering, the fully textured perovskite/silicon tandem cells obtain a certified efficiency of 28.84% on a 1.2‐cm 2 masked area, which is the highest performance to date based on the fully textured, production‐line compatible SHJ. This work advances commercially promising photovoltaics with high performance and low costs by adopting a meticulously designed HTL/perovskite interface.


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