Cited by 31
WuFeng University
Publishes on Thin-Film Transistor Technologies, GaN-based semiconductor devices and materials, Silicon and Solar Cell Technologies. 22 papers and 145 citations.
Add your photo, update your bio, and get notified when your ranking changes.
In this paper, I describe an effective method of obtaining a high photovoltaic efficiency of InxGa1-xN/GaN-based solar cells with a multiple-quantum-well (MQW) structure using a SiCN/Si (111) substrate. The MQW region had a higher solar cell absorption than the non-MQW InxGa1-xN/GaN sample. Under an air mass 1.5 global solar spectrum, an average increase of 38.5% in the photovoltaic efficiency of the MQW sample over the control sample was observed. It was found that the device and fabrication technology developed in this study are applicable to the realization of solar cells with high open-circuit voltages (Voc) of 2.92 to 3.16 V, high short-circuit current densities (Jsc) of 55.1 to 56.5 mA/cm2, and high fill factors of 89.5 to 91.8%.
The use of hydrogen plasma (H-plasma) treatment to improve field emission (FE) characteristics of self-synthesized tungsten oxide nanowires (TONWs) is reported. With a H-plasma treatment under a working power of 200 W and a pressure of 500 mtorr for 20 s, improved FE characteristics with a turn-on field (4.7 V/μm at 10 μA/cm2) lower than those of the as-grown case by 23% and a reduction in the effective emission barrier of 0.72 eV were obtained, which is attributed to the reduction in oxygen adsorption, decrease in the wire length and density, and transition of TONWs surfaces from well crystalline into the amorphous phase.