Improvement of field emission characteristics of tungsten oxide nanowires by hydrogen plasma treatment
W.C. Tsai(Institute of Microelectronics), S.-J. Wang(Institute of Microelectronics), C. L. Chang(National Cheng Kung University), C.-H. Chen, Rong-Ming Ko(Institute of Microelectronics), Bor Wen Liou(WuFeng University)
Cited by 16
Abstract
The use of hydrogen plasma (H-plasma) treatment to improve field emission (FE) characteristics of self-synthesized tungsten oxide nanowires (TONWs) is reported. With a H-plasma treatment under a working power of 200 W and a pressure of 500 mtorr for 20 s, improved FE characteristics with a turn-on field (4.7 V/μm at 10 μA/cm2) lower than those of the as-grown case by 23% and a reduction in the effective emission barrier of 0.72 eV were obtained, which is attributed to the reduction in oxygen adsorption, decrease in the wire length and density, and transition of TONWs surfaces from well crystalline into the amorphous phase.
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