Electronic properties of chemically deposited polycrystalline siliconM. Hirose, Y. Osaka, M. Taniguchi|Journal of Applied Physics|1979Cited by 75
Substitutional doping of chemically vapor-deposited amorphous siliconM. Taniguchi, Y. Osaka, M. Hirose|Journal of Crystal Growth|1978Cited by 63
Novel effects of magnetic field on the silane glow dischargeM. Taniguchi, Y. Osaka, Toshihiko Hamasaki et al.|Applied Physics Letters|1980Cited by 59
Defect compensation in doped CVD amorphous siliconM. Hirose, Tatsuo Shimizu, M. Taniguchi et al.|Journal of Non-Crystalline Solids|1980Cited by 29