Defect compensation in doped CVD amorphous silicon
M. Hirose(Kitasato University), Tatsuo Shimizu(Japan Atomic Energy Agency), Toshio Nakashita(Hiroshima University), S. Hasegawa(Kanazawa University), Y. Osaka(Hiroshima University), M. Taniguchi(Kyoto University), Takao Suzuki(Hiroshima Institute of Technology)
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