Length scaling of the Double Gate Tunnel FET with a high-K gate dielectricKathy Boucart, Adrian M. Ionescu|Solid-State Electronics|2007Cited by 224
A new definition of threshold voltage in Tunnel FETsKathy Boucart, Adrian M. Ionescu|Solid-State Electronics|2008Cited by 173
Double Gate Tunnel FET with ultrathin silicon body and high-k gate dielectricKathy Boucart, Adrian M. Ionescu|Proceedings of the European Solid State Device Research Conference|2006Cited by 104