Double Gate Tunnel FET with ultrathin silicon body and high-k gate dielectric

Kathy Boucart(École Polytechnique Fédérale de Lausanne), Adrian M. Ionescu(NanoLab (United States))
Proceedings of the European Solid State Device Research Conference
September 1, 2006
10.1109/essder.2006.307718
Cited by 104

Related Papers

Tunnel field-effect transistors as energy-efficient electronic switches
|Nature|2011|2.9k
Length scaling of the Double Gate Tunnel FET with a high-K gate dielectric
|Solid-State Electronics|2007|224
Delta lake
|Proceedings of the VLDB Endowment|2020|210
Metal-Ferroelectric-Meta-Oxide-semiconductor field effect transistor with sub-60mV/decade subthreshold swing and internal voltage amplification
|Unknown|2010|195
A new definition of threshold voltage in Tunnel FETs
|Solid-State Electronics|2008|173