Electronic structure of a narrow-gap semiconductor FeGa<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:msub><mml:mrow/><mml:mrow><mml:mn>3</mml:mn></mml:mrow></mml:msub></mml:mrow></mml:math>investigated by photoemission and inverse photoemission spectroscopiesMasashi Arita, T. Takabatake, H. Sato et al.|Physical Review B|2011Cited by 25
Unoccupied electronic structure of<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:msub><mml:mi mathvariant="normal">Y</mml:mi><mml:mrow><mml:mn>1</mml:mn><mml:mo>−</mml:mo><mml:mi>x</mml:mi></mml:mrow></mml:msub><mml:msub><mml:mi mathvariant="normal">Ca</mml:mi><mml:mi>x</mml:mi></mml:msub><mml:mi mathvariant="normal">Ti</mml:mi><mml:msub><mml:mi mathvariant="normal">O</mml:mi><mml:mn>3</mml:mn></mml:msub></mml:mrow></mml:math>investigated by inverse photoemission spectroscopyMasashi Arita, T. Takabatake, H. Sato et al.|Physical Review B|2007Cited by 13